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Effects of Sensor Platform Scaling on Signal-to-Noise Ratio in the Resistor-and Horizontal Floating-Gate FET-Type Gas Sensors

Authors
Shin, WonjunKoo, Ryun-HanHong, SeongbinJung, GyuweonJeong, YujeongLee, Sung-TaeLee, Jong-Ho
Issue Date
Nov-2023
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
Indium–gallium–zinc oxide (IGZO); low-frequency noise (LFN); nitrogen dioxide (NO<inline-formula xmlns:ali=http://www.niso.org/schemas/ali/1.0/ xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink xmlns:xsi=http://www.w3.org/2001/XMLSchema-instance> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula>); scaling; signal-to-noise ratio (SNR)
Citation
IEEE Transactions on Electron Devices, v.70, no.11, pp 1 - 6
Pages
6
Journal Title
IEEE Transactions on Electron Devices
Volume
70
Number
11
Start Page
1
End Page
6
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32398
DOI
10.1109/TED.2023.3312060
ISSN
0018-9383
1557-9646
Abstract
We investigate the effects of sensor platform scaling on signal-to-noise-ratio (SNR) in the resistor-and field-effect-transistor (FET)-type gas sensors with horizontal floating gate (FG). Indium&#x2013;gallium&#x2013;zinc oxide (IGZO) is used as a sensing material and deposited by the RF sputtering method. The low-frequency noise (LFN) characteristics of the resistor-and FET-type gas sensors are determined by the sensing material and FET transducer, respectively. In both resistor-and FET-type gas sensors, the SNR decreases with the scaling of the sensing area. However, the reason for a decrease in the SNR differs depending on the sensor platform. The decrease in SNR in a resistor-type gas sensor is due to an increase in intrinsic device noise and gas-to-air-noise ratio (GANR), whereas a decrease in SNR in an FET-type gas sensor is due to a decrease in response. The results provide important design guidelines in designing and fabricating the resistor-and FET-type gas sensors. IEEE
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