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Advanced HIL strategies in QLEDs: V<sub>2</sub>O<sub>5</sub> and PEDOT:PSS dual-layer for charge balance and electron leakage prevention

Authors
Bin Cho, HanKim, Ha JunViswanath, Noolu Srinivasa ManikantaSamanta, TuhinMin, Jeong WanJang, Sung WooPark, Yong MinJang, Se HyukYang, HeesunIm, Won Bin
Issue Date
24-Jan-2024
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.12, no.9, pp 3196 - 3202
Pages
7
Journal Title
JOURNAL OF MATERIALS CHEMISTRY C
Volume
12
Number
9
Start Page
3196
End Page
3202
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32706
DOI
10.1039/d3tc04652d
ISSN
2050-7526
2050-7534
Abstract
Quantum dot light emitting devices (QLEDs) show promise for displays, with polyethylenedioxythiophene: polystyrene (PEDOT:PSS) commonly used as a hole injection layer (HIL) due to its high conductivity and work function. However, PEDOT:PSS-based QLEDs face an energy barrier, reducing efficiency. Herein, in this work, we used the rapid thermal annealing (RTA) process to improve the conductivity by controlling the RTA processing time which reduced the interfacial resistance. This improves charge balance and long-term stability by preventing electron leakage. The optimized V2O5 /PEDOT:PSS-based QLED, with an EQE of 18%, CE of 77 cd A(-1 )and maximum luminance of 23 242 cd m(-2), outperforms the PEDOT:PSS-based counterpart. This highlights the strategic superiority of V2O5 HIL in our QLED.
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