Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide
- Authors
- Kim, Hyun-Seop; Eom, Su-Keun; Seo, Kwang-Seok; Kim, Hyungtak; Cha, Ho-Young
- Issue Date
- Sep-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- AlGaN/GaN MOS-HFETs; PECVD; SiO2; TDDB; Flat-band voltage; Charge density; Reliability
- Citation
- VACUUM, v.155, pp.428 - 433
- Journal Title
- VACUUM
- Volume
- 155
- Start Page
- 428
- End Page
- 433
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3272
- DOI
- 10.1016/j.vacuum.2018.06.043
- ISSN
- 0042-207X
- Abstract
- This paper reports the first-time evaluation of the time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with plasma enhanced chemical vapor deposition (PECVD) SiO2 gate oxide. The interface fixed charge density and oxide bulk charge density extracted from the flat-band voltage characteristics were 2.7 x 10(11) +/- 6.54 x 10(10) cm(-2) and -9.71 x 10(17) +/- 5.18 x 10(16) cm(-3), respectively. The time dependent dielectric breakdown (TDDB) characteristics exhibited longer lifetime estimation as the SiO2 thickness increased. The excellent reliability of the PECVD SiO2 film was validated for use as the gate oxide of recessed AlGaN/GaN MOS-HFET.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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