Toward Ideal Low-Frequency Noise in Monolayer CVD MoS<sub>2</sub> FETs: Influence of van der Waals Junctions and Sulfur Vacancy Managementopen access
- Authors
- Shin, Wonjun; Byeon, Junsung; Koo, Ryun-Han; Lim, Jungmoon; Kang, Jung Hyeon; Jang, A-Rang; Lee, Jong-Ho; Kim, Jae-Joon; Cha, Seungnam; Pak, Sangyeon; Lee, Sung-Tae
- Issue Date
- 21-May-2024
- Publisher
- WILEY
- Keywords
- 1/f noise; 2D TMDC; contact resistance; copper sulfide; low-frequency noise; self-healing effect
- Citation
- ADVANCED SCIENCE
- Journal Title
- ADVANCED SCIENCE
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/33226
- DOI
- 10.1002/advs.202307196
- ISSN
- 2198-3844
2198-3844
- Abstract
- The pursuit of sub-1-nm field-effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative. However, the non-idealities, such as excess low-frequency noise (LFN) in 2D FETs, present substantial hurdles to their realization and commercialization. In this study, ideal LFN characteristics in monolayer MoS2 FETs are attained by engineering the metal-2D semiconductor contact and the subgap density of states (DOS). By probing non-ideal contact resistance effects using CuS and Au electrodes, it is uncovered that excess contact noise in the high drain current (I-D) region can be substantially reduced by forming a van der Waals junction with CuS electrodes. Furthermore, thermal annealing effectively mitigates sulfur vacancy-induced subgap density of states (DOS), diminishing excess noise in the low I-D region. Through meticulous optimization of metal-2D semiconductor contacts and subgap DOS, alignment of 1/f noise with the pure carrier number fluctuation model is achieved, ultimately achieving the sought-after ideal LFN behavior in monolayer MoS2 FETs. This study underscores the necessity of refining excess noise, heralding improved performance and reliability of 2D electronic devices.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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