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Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer
- Authors
- Chung, G.; Cha, H. -Y.; Kim, H.
- Issue Date
- 12-Jul-2018
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Keywords
- field effect transistors; semiconductor heterojunctions; hydrogen; gas sensors; gallium compounds; aluminium compounds; wide band gap semiconductors; III-V semiconductors; Schottky barriers; platinum; Schottky diodes; technology CAD (electronics); semiconductor device models; electron density; catalysts; catalysis; AlGaN; GaN heterojunction gas sensors; GaN-cap layer; hydrogen gas sensors; AlGaN; GaN heterojunction platform; AlGaN; GaN FET-type sensors; hydrogen gas sensitivity; temperature 200; 0 degC; AlGaN-GaN; Pt-GaN; H-2
- Citation
- ELECTRONICS LETTERS, v.54, no.14, pp.896 - +
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 54
- Number
- 14
- Start Page
- 896
- End Page
- +
- ISSN
- 0013-5194
- Abstract
- We fabricated Pt-functionalised hydrogen gas sensors on AlGaN/GaN heterojunction platform and investigated the influence of GaN-cap layer on the sensing characteristics. Pt-Schottky diodes with GaN-cap layer exhibited a larger change of Schottky barrier height than ones with no GaN-cap layer when hydrogen gas was detected. Technology computer-aided design simulation indicated that the increase of electron concentration at heterojunction can be magnified by a larger change of barrier height. The AlGaN/GaN FET-type sensors with Pt catalyst on the gate area demonstrated significant enhancement of hydrogen gas sensitivity from 16 to 35% at 200 degrees C when GaN cap layer was employed.
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Related Researcher
- Kim, Hyung tak
- Engineering (Electronic & Electrical Engineering)