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Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High-k Dual MIS Structure
- Authors
- Kim, Dong-Hwan; Park, Hongjong; Eom, Su-Keun; Jeong, Jun-Seok; Cha, Ho-Young; Seo, Kwang-Seok
- Issue Date
- Jul-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- AlGaN/GaN-on-Si; gate recess; dual MIS; high-k; MMIC; power amplifier; Ka-band
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.39, no.7, pp.995 - 998
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 39
- Number
- 7
- Start Page
- 995
- End Page
- 998
- ISSN
- 0741-3106
- Abstract
- This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal-insulator-semiconductor (MIS) structure with SiNx/HfON dual dielectric layers. The fabricated 0.15-mu m AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5% at the drain voltage of 20 V, at 26.5 GHz.
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)