Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs
- Authors
- Keum, Dongmin; Kim, Hyungtak
- Issue Date
- Jul-2018
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Low-temperature; Cryogenic; AlGaN/GaN-on-Si; Normally-off; Power; Heterostructure; Recessed-gate; Mobility; 2-DEG
- Citation
- CRYOGENICS, v.93, pp.51 - 55
- Journal Title
- CRYOGENICS
- Volume
- 93
- Start Page
- 51
- End Page
- 55
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3476
- DOI
- 10.1016/j.cryogenics.2018.05.009
- ISSN
- 0011-2275
- Abstract
- We investigated the low-temperature operation of normally-off AlGaN/GaN heterostructure field-effect-transistors (HFETs) with gate-recessed metal-oxidesemiconductor (MOS) structure and normally-on Schottky-gate high-electron-mobility-transistors (HEMTs). Device characteristics measured from 100 to 300 K exhibited the distinct temperature-dependence between two types of devices. While the increase of on-current was observed from normally-on AlGaN/GaN Schottky-gate HEMTs due to the enhanced mobility in the two-dimensional electron gas (2-DEG) channel, normally-off AlGaN/GaN gate-recessed MOSHFETs demonstrated distinctive characteristics at 100 K including the decrease of on-current and the positive shift of threshold voltage (V-th). The temperature-dependence observed in gate-recessed MOSHFETs is attributed to the different characteristics of the recessed channel from the 2-DEG channel, in which the sheet carrier density (n(sh)) and mobility (mu) were reduced as the temperature approaches the cryogenic regime.
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