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A low-power fast-lock DCC with a digital duty-cycle adjuster for LPDDR3 and LPDDR4 DRAMs

Authors
Kim, JongsunHan, S. W.
Issue Date
10-Apr-2018
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Keywords
duty-cycle corrector; LPDDR3; LPDDR4; SDRAM; memory; DRAM
Citation
IEICE ELECTRONICS EXPRESS, v.15, no.7
Journal Title
IEICE ELECTRONICS EXPRESS
Volume
15
Number
7
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3845
DOI
10.1587/elex.15.20180156
ISSN
1349-2543
Abstract
A new low-power, fast-lock duty-cycle corrector (DCC) circuit with a digital duty-cycle adjuster (DCA) for mobile LPDDR3/LPDDR4 DRAMs is presented. The proposed DCC utilizes a digital feedback delay element (DFDE) to achieve wide duty-cycle correction and operating frequency ranges with low power consumption and fast lock capability. To obtain fast locking time and high duty-cycle correction accuracy, a 6-bit successive approximation register (SAR) controller utilizing a hybrid search algorithm is adopted. The measured duty-cycle error is less than +/- 0.85% over a 30-70% input duty-cycle range at 0.2-1.5 GHz. The DCC, which is fabricated in a 0.13-mu m CMOS process, dissipates only 1.9 mW at 1 GHz and occupies an area of 0.036 mm(2).
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