Detailed Information
Cited 2 time in 
Cited 2 time in 
Cited 2 time in
Metadata Downloads
Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing
- Authors
- Lee, Jae-Gil; Kim, Dong-Hwan; Eom, Su-Keun; Roh, Seung-Hyun; Seo, Kwang-Seok; Kim, Hyun-Seop; Kim, Hyungtak; Cha, Ho-Young; Byun, Young-Chul
- Issue Date
- Jan-2018
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- 4H-SiC; High temperature; Post-metallization annealing; MOS interface; Molybdenum
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.72, no.1, pp.166 - 170
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 72
- Number
- 1
- Start Page
- 166
- End Page
- 170
- ISSN
- 0374-4884
- Abstract
- The effects of post-metallization annealing (PMA) have been investigated for thermally-grown SiO2 on 4H-SiC metal-oxide-semiconductor (MOS) with a molybdenum (Mo) gate electrode. Mo is a great metal gate material for Silicon carbide (SiC) due to its high thermal budget and low thermal expansion coefficient, which allows high-temperature processing after the gate electrode formation. In this study, PMA process was carried out after Mo gate formation on thermally-grown SiO2/4H-SiC in the temperature range from 600 to 1000 A degrees C in N-2 or a forming gas ambient. The fabricated Mo/SiO2/4H-SiC MOS device annealed at 800 A degrees C exhibited excellent interface characteristics with negligible hysteresis in comparison with as-grown or post-oxidation annealed samples.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)