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Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O-3 treatment
Kim, Kwangeun
Article
Issue Date
2020
Citation
RESULTS IN PHYSICS, v.16
Publisher
ELSEVIER
Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O3 treatment
김광은
Article
Issue Date
2019
Citation
Results in Physics, v.16, no.-, pp.102964 - 102964
Publisher
Elsevier Science BV
Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate
Choi, J-H;
Cho, C-H
;
Cha, H-Y
Article
Issue Date
2018
Citation
RESULTS IN PHYSICS, v.9, pp.1170 - 1171
Publisher
ELSEVIER SCIENCE BV
1
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Author
Kim, Kwang eun
2
Cho, Chun Hyung
1
Cha, Ho Young
1
Subject
Breakdown voltage
1
Field plate
1
Gallium oxide
1
High permittivity
1
Schottky barrier diode
1
Date Issued
2020
1
2019
1
2018
1
Type
Article
3
Language
English
2
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