5-MeV Proton-irradiation characteristics of AlGaN/GaN –on-Si HEMTs with various Schottky metal gates5-MeV Proton-irradiation characteristics of AlGaN/GaN –on-Si HEMTs with various Schottky metal gates
- Other Titles
- 5-MeV Proton-irradiation characteristics of AlGaN/GaN –on-Si HEMTs with various Schottky metal gates
- Authors
- 조희형; 김형탁
- Issue Date
- 2018
- Publisher
- 한국전기전자학회
- Keywords
- AlGaN/GaN-on-Si; high electron mobility transistors; proton irradiation; displacement damage; Schottky contact.
- Citation
- 전기전자학회논문지, v.22, no.2, pp.484 - 487
- Journal Title
- 전기전자학회논문지
- Volume
- 22
- Number
- 2
- Start Page
- 484
- End Page
- 487
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/4498
- ISSN
- 1226-7244
- Abstract
- 5 MeV proton-irradiation with total dose of 1015 /cm2 was performed on AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with various gate metals including Ni, TaN, W, and TiN to investigate the degradation characteristics. The positive shift of pinch-off voltage and the reduction of on-current were observed from irradiated HEMTs regardless of a type of gate materials. Hall and transmission line measurements revealed the reduction of carrier mobility and sheet charge concentration due to displacement damage by proton irradiation. The shift of pinch-off voltage was dependent on Schottky barrier heights of gate metals. Gate leakage and capacitance-voltage characteristics did not show any significant degradation demonstrating the superior radiation hardness of Schottky gate contacts on GaN.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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