Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing
- Authors
- Jung, Sunwoo; Baik, Kwang Hyeon; Ren, Fan; Pearton, Stephen J.; Jang, Soohwan
- Issue Date
- 15-Sep-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Hydrogen; GaN; moisture barrier; encapsulation
- Citation
- IEEE SENSORS JOURNAL, v.17, no.18, pp.5817 - 5822
- Journal Title
- IEEE SENSORS JOURNAL
- Volume
- 17
- Number
- 18
- Start Page
- 5817
- End Page
- 5822
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5290
- DOI
- 10.1109/JSEN.2017.2733343
- ISSN
- 1530-437X
- Abstract
- Polydimethylglutarimide (PMGI), a photosensitive positive type resin used in photoresists, is shown to be an effective moisture barrier for mitigating the effect of humidity on the sensitivity of Pt-AlGaN/GaN Schottky diodes for hydrogen detection. The maximum relative current change observed in PMGI-encapsulated diodes forward biased at 1.3 V and exposed to 500 ppm of dry or humid H-2 is identical within experimental error over the temperature range 25 degrees C-300 degrees C and peaks at 200 degrees C in both cases (4.4 x 10(6)% increase compared with the current under N-2 ambient). Unencapsulated diodes exhibit a decrease of approximately one ninth of the current signal for detection of 500 ppm of H-2 in the presence of water. The PMGI is easily spun-on to the sensors, and does not degrade until temperatures of 335 degrees C or higher, making it a suitable moisture barrier for most hydrogen sensing applications.
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