Field-effect-induced transport properties of Zn1-xMgxO nanocrystal solid solution

Abstract

We report electrical properties of Zn1-xMgxO nanocrystal solid solution ( NCSS) depending on the composition of Mg using a bottom-contact field-effect transistor. In the Zn1-xMgxO NCSS, as the composition of Mg increases, the field-effect mobility decreases with the threshold voltage shifting to a more positive value. The decrease in the field-effect mobility is attributed to the decrease in the size of the Zn1-xMgxO NCSS. The increase in the electron trap density in the Zn1-xMgxO NCSS with the addition of Mg caused a more positive threshold voltage shift. Change in the trap density as a function of Mg composition was demonstrated through comparison of the photoluminescence intensity.