p-GaN/AlGaN/GaN E-mode FET 제작을 위한 선택적 GaN 식각 공정 개발Development of Selective GaN etching Process for p-GaN/AlGaN/GaN E-mode FET Fabrication
- Other Titles
- Development of Selective GaN etching Process for p-GaN/AlGaN/GaN E-mode FET Fabrication
- Authors
- 장원호; 차호영
- Issue Date
- 2020
- Publisher
- 한국정보통신학회
- Keywords
- Enhancement-mode; GaN; p-GaN; Selective etching; FET
- Citation
- 한국정보통신학회논문지, v.24, no.2, pp.321 - 324
- Journal Title
- 한국정보통신학회논문지
- Volume
- 24
- Number
- 2
- Start Page
- 321
- End Page
- 324
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/696
- DOI
- 10.6109/jkiice.2020.24.2.321
- ISSN
- 2234-4772
- Abstract
- In this work, we developed a selective etching process for GaN that is a key process in p-GaN/AlGaN/GaN enhancement-mode (E-mode) power switching field-effect transistor (FET) fabrication. In order to achieve a high current density of p-GaN/AlGaN/GaN E-mode FET, the p-GaN layer beside the gate region must be selectively etched whereas the underneath AlGaN layer should be maintained. A selective etching process was implemented by oxidizing the surface of the AlGaN layer and the GaN layer by adding O2 gas to Cl2/N2 gas which is generally used for GaN etching. A selective etching process was optimized using Cl2/N2/O2 gas mixture and a high selectivity of 53:1 (= GaN/AlGaN) was achieved.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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