Characterization of Stiffness Coefficients of Silicon Versus Temperature using "Poisson's Ratio" Measurements
- Authors
- Cho, Chun-Hyung; Cha, Ho-Young; Sung, Hyuk-Kee
- Issue Date
- Apr-2016
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Stiffness coefficients; compliance coefficients; Poisson' s ratio
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.2
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 16
- Number
- 2
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/8011
- DOI
- 10.5573/JSTS.2016.16.2.153
- ISSN
- 1598-1657
- Abstract
- The elastic material constants, stiffness constants (c(11), c(12), and c(44)), are three unique coefficients that establish the relation between stress and strain. Accurate knowledge of mechanical properties and the stiffness coefficients for silicon is required for design of Micro-Electro-Mechanical Systems (MEMS) devices for proper modeling of stress and strain in electronic packaging. In this work, the stiffness coefficients for silicon as a function of temperature from -150 degrees C to + 25 degrees C have been extracted by using the experimental measurements of Poisson's ratio (v) of silicon in several directions.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
- College of Science and Technology > Department of Electronic and Electrical Engineering > 1. Journal Articles
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