Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere
- Authors
- Lee, Jae-Gil; Kim, Hyun-Seop; Lee, Jung-Yeon; Seo, Kwang-Seok; Cha, Ho-Young
- Issue Date
- Nov-2015
- Publisher
- IOP PUBLISHING LTD
- Keywords
- gallium nitride; SiO2; post-metallization-annealing; oxygen atmosphere
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.11
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 30
- Number
- 11
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9266
- DOI
- 10.1088/0268-1242/30/11/115008
- ISSN
- 0268-1242
- Abstract
- We have investigated the effects of post-metallization-annealing (PMA) in oxygen atmosphere on recessed-gate GaN metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs). The flat band voltage of MOS is a function of bulk and interface charges in the oxide, which strongly depends on a post-annealing process as well as deposition conditions. A positive threshold voltage shift enabling normally-off operation has been achieved by an O-2 PMA process where the GaN MOSHFET employed an ICPCVD SiO2 gate oxide with a Ni/Au metal gate. According to the analysis using energy dispersive x-ray spectroscopy in transmission electron microscopy and x-ray photoelectron spectroscopy, it is suggested that the improved SiO2/GaN interface quality with an enhanced metallic-like Ga level was responsible for the positive shift in threshold voltage.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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