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1.3 nm Effective Oxide Thickness Self-aligned InGaAs MOS-HEMT Using SiNx/HfO2 Bi-layer as Gate Insulator
- Authors
- 차호영
- Issue Date
- 29-Jun-2015
- Publisher
- AWAD
- Citation
- AWAD proceeding, v.1, no.1, pp.195 - 197
- Journal Title
- AWAD proceeding
- Volume
- 1
- Number
- 1
- Start Page
- 195
- End Page
- 197
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)