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Scaling of Data Retention Statistics in Phase-Change Random Access Memory
- Authors
- Kwon, Yongwoo; Park, Byoungnam; Kang, Dae-Hwan
- Issue Date
- May-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Phase-change random access memory (PC-RAM); data retention; modeling
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.36, no.5, pp.454 - 456
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 36
- Number
- 5
- Start Page
- 454
- End Page
- 456
- ISSN
- 0741-3106
- Abstract
- A scaling law on data retention statistics is presented for sub-20-nm phase-change random access memory with a confined cell structure. Nucleation and growth was modeled with phase-field method. Universality encompassing cell size, temperature, and active phase-change material was found.
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Related Researcher
- Kwon, Yong woo
- Engineering (Advanced Materials)