Ti 쇼트키 배리어 다이오드의 Al 확산 방지를 위한 SC-1 세정 효과Effect of SC-1 Cleaning to Prevent Al Diffusion for Ti Schottky Barrier Diode
- Other Titles
- Effect of SC-1 Cleaning to Prevent Al Diffusion for Ti Schottky Barrier Diode
- Authors
- 최진석; 최여진; 안성진
- Issue Date
- Feb-2021
- Publisher
- 한국재료학회
- Keywords
- Schottky barrier diode; Al diffusion; SC-1; Ti silicide
- Citation
- 한국재료학회지, v.31, no.2, pp.97 - 100
- Journal Title
- 한국재료학회지
- Volume
- 31
- Number
- 2
- Start Page
- 97
- End Page
- 100
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19054
- DOI
- 10.3740/MRSK.2021.31.2.97
- ISSN
- 1225-0562
- Abstract
- We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.
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