Effects of arsenic implantation and rapid thermal annealing on ZnO nanorods for p-type doping
- Authors
- Choi, Jinseok; An, Sung Jin
- Issue Date
- Sep-2020
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.38, no.5
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 38
- Number
- 5
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19070
- DOI
- 10.1116/6.0000041
- ISSN
- 1071-1023
- Abstract
- Ion implantation is a useful method of fabricating p-type zinc oxide (ZnO) nanorods; however, it typically causes structural defects in the substrate material. Rapid thermal annealing (RTA) is a well-known annealing process in the semiconductor industry used to restore lattice defects, and it has the advantage of a fast processing time. Herein, we report on the effects of arsenic (As) implantation and RTA on ZnO nanorods for p-type doping. As+ ions were implanted using a mid-current ion implanter. A long-duration RTA of over 10min that was used to activate the implanted As+ ions and recover the destroyed ZnO lattice changed the morphology of the As+-ion-implanted regions. The structural recovery after RTA at over 750 degrees C for 1min was significant. In the low-temperature photoluminescence spectra, a new acceptor-bound exciton emission (A degrees X) peak associated with the As acceptor was observed. When RTA was conducted at 950 degrees C, p-type behavior of the As-doped ZnO nanorods could be observed, and the hole concentration was determined to be 6.311x10(16)cm(-3). This result indicates that the implanted As+ ions were activated as p-type dopants for 1min.
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