GaN nanowire/thin film vertical structure p-n junction light-emitting diodes
- Authors
- Hong, Young Joon; Lee, Chul-Ho; Park, Jun Beom; An, Sung Jin; Yi, Gyu-Chul
- Issue Date
- 23-Dec-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.103, no.26
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 103
- Number
- 26
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19196
- DOI
- 10.1063/1.4860971
- ISSN
- 0003-6951
- Abstract
- Here, we report vertical-type GaN nanowire-based light-emitting diodes (LEDs) fabricated by the metal-catalyzed vapor-liquid-solid (VLS) method. The nickel-catalyzed VLS process yielded both n-GaN nanowires and GaN nanoislands on substrates. The nanoislands markedly deteriorated the diode and electroluminescent characteristics in n-nanowire/p-film LED structures because of parasitic resistance and deep level emission caused by nanoislands. By burying the nanoislands with an insulating layer and adopting coaxial p-n junction nanowire structures, nanowire-based LEDs were shown to exhibit superior device performance, including highly rectifying and monochromatic electroluminescent characteristics. Thus, the undesirable effects associated with nanoislands were considerably suppressed. This work provides a rationale for designing high-performance vertical nanowire-based LEDs. (C) 2013 AIP Publishing LLC.
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