Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistoropen access
- Authors
- Mallem, Siva Pratap Reddy; Puneetha, Peddathimula; Lee, Dong-Yeon; Kim, Yoonkap; Kim, Han-Jung; Im, Ki-Sik; An, Sung-Jin
- Issue Date
- Jul-2023
- Publisher
- MDPI
- Keywords
- carrier trap; 1/f-noise; nanowire; AlGaN; GaN
- Citation
- NANOMATERIALS, v.13, no.14
- Journal Title
- NANOMATERIALS
- Volume
- 13
- Number
- 14
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/21811
- DOI
- 10.3390/nano13142132
- ISSN
- 2079-4991
- Abstract
- We used capacitance-voltage (C-V), conductance-voltage (G-V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 x 10(13) eV(-1.)cm(-2) at 1 kHz to 1.2 x 10(11) eV(-1.)cm(-2) at 1 MHz. The power spectral density exhibits 1/f-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/f-noise features. At lower frequencies, the device exhibits 1/f-noise behavior, while beyond 1 kHz, it exhibits 1/f(2)-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/f(2)-noise features moves to the subordinated frequency (similar to 10(2) Hz) side.
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