Detailed Information
Cited 0 time in 
Cited 61 time in 
Cited 61 time in
Metadata Downloads
Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers
- Authors
- Park, Jae Chul; Lee, Ho-Nyeon
- Issue Date
- Jun-2012
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Amorphous semiconductors; thin-film transistors (TFTs)
- Citation
- IEEE Electron Device Letters, v.33, no.6, pp 818 - 820
- Pages
- 3
- Journal Title
- IEEE Electron Device Letters
- Volume
- 33
- Number
- 6
- Start Page
- 818
- End Page
- 820
- ISSN
- 0741-3106
1558-0563
- Abstract
- An amorphous oxide semiconductor thin-film transistor (TFT) with a 47.7-cm(2) . V-1 . s(-1) field-effect mobility (mu(FE)) and a 1.57-V threshold voltage (V-TH) was produced using a double-stacked active layer composed of a 5-nm indium-zinc-oxide layer and a 60-nm gallium-indium-zinc-oxide (GIZO) layer. The mu(FE) is about 2.3 times higher than that of a GIZO TFT, and the V-TH is almost same as that of a GIZO TFT. The stability of this TFT with a double-stacked active layer was superior to that of a GIZO TFT.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Lee, Ho nyeon
- College of Engineering (Department of Display and Electronic Information Engineering)