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The Effects of Gadolinium Incorporation Into Indium-Zinc-Oxide Thin-Film Transistors
- Issue Date
- Jun-2012
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Indium; thin-film transistors (TFTs); zinc
- Citation
- IEEE Electron Device Letters, v.33, no.6, pp 809 - 811
- Pages
- 3
- Journal Title
- IEEE Electron Device Letters
- Volume
- 33
- Number
- 6
- Start Page
- 809
- End Page
- 811
- ISSN
- 0741-3106
1558-0563
- Abstract
- We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm(2)V(-1)s(-1), 1.04 V, and on the order of 10(7), respectively, after thermal annealing at 250 degrees C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable ionic bond between Gd and O.
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Related Researcher
- Lee, Ho nyeon
- College of Engineering (Department of Display and Electronic Information Engineering)