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Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
- Issue Date
- May-2012
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Indium; lanthanum; thin-film transistors (TFTs); zinc
- Citation
- IEEE Electron Device Letters, v.33, no.5, pp 685 - 687
- Pages
- 3
- Journal Title
- IEEE Electron Device Letters
- Volume
- 33
- Number
- 5
- Start Page
- 685
- End Page
- 687
- ISSN
- 0741-3106
1558-0563
- Abstract
- We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm(2) . V-1 . s(-1) and on the order of 10(8), respectively, before thermal annealing and 3.02 cm(2) . V-1 . s(-1) and on the order of 10(10), respectively, after thermal annealing at 150 degrees C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable ionic bond between La and O.
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Related Researcher
- Lee, Ho nyeon
- College of Engineering (Department of Display and Electronic Information Engineering)