P-type Copper Oxide Thin Films Deposited by Vacuum Thermal Evaporation
- Authors
- Lee, Ho-Nyeon; Song, Byeong-Jun
- Issue Date
- 2012
- Publisher
- Taylor & Francis
- Keywords
- Annealing; copper oxide; evaporation; p-type
- Citation
- Molecular Crystals and Liquid Crystals, v.564, pp 198 - 205
- Pages
- 8
- Journal Title
- Molecular Crystals and Liquid Crystals
- Volume
- 564
- Start Page
- 198
- End Page
- 205
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/15976
- DOI
- 10.1080/15421406.2012.696509
- ISSN
- 1542-1406
1543-5318
- Abstract
- Using vacuum thermal evaporation combined with post-deposition annealing, we obtained p-type copper oxide films with a hole concentration on the order of 10(16) cm(-3) and Hall mobility of over 5 cm(2) V-1 s(-1). These properties are in the range that can be used for an active layer of p-channel thin film transistors. We used air thermal annealing to convert n-type conduction of as-deposited films to p-type conduction, and determined that vacuum thermal annealing did not change the n-type conductivity of the as-deposited films.
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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