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Understanding the Electroluminescence Mechanism of CdSe/ZnS Quantum-Dot Light-Emitting Diodes With a Focus on Charge Carrier Behavior in Quantum-Dot Emissive Layers
- Authors
- Kim, Dongjin; Lee, Seyoung; Kim, Jimyoung; Lee, Honyeon
- Issue Date
- Jun-2023
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Electron traps; Quantum dots; Charge carriers; Light emitting diodes; Voltage; Transient analysis; Performance evaluation; Quantum-dot light-emitting diode; transient electroluminescence; impedance spectroscopy
- Citation
- IEEE Electron Device Letters, v.44, no.6, pp 959 - 962
- Pages
- 4
- Journal Title
- IEEE Electron Device Letters
- Volume
- 44
- Number
- 6
- Start Page
- 959
- End Page
- 962
- ISSN
- 0741-3106
1558-0563
- Abstract
- We analyzed the electroluminescence (EL) mechanisms of quantum-dotlight-emitting diodes (QLEDs) with a focus on charge carrier trapping/detrapping. Multilayer quantum-dot (QD) emissive layers (EMLs) exhibit low void density and many QD surface traps, which provide high efficiency in the low bias voltage region; the efficiency gradually decreases in the high bias voltage region. The roles played by traps and charge carrier trapping/detrapping during QLED EL were revealed by transient EL and impedance spectroscopy analyses. Charge carrier trapping/detrapping of QLEDs with a multilayer QD EML in the low bias voltage region promoted charge injection, rapid initiation of EL, and high current efficiency. In contrast to the conventional view, traps improved QLED performance.
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Related Researcher
- Lee, Ho nyeon
- College of Engineering (Department of Display and Electronic Information Engineering)