Improving the charge balance and performance of CdSe/ZnS quantum-dot light-emitting diodes with a sputtered zinc-tin-oxide electron-transport layer and a thermally evaporated tungsten-oxide charge-restricting layer
- Authors
- Kim, Dong-Jin; Lee, Ho-Nyeon
- Issue Date
- 1-Oct-2019
- Publisher
- IOP Publishing Ltd
- Keywords
- QD-LED
- Citation
- Japanese Journal of Applied Physics, v.58, no.10
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 58
- Number
- 10
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/4149
- DOI
- 10.7567/1347-4065/ab3c77
- ISSN
- 0021-4922
1347-4065
- Abstract
- The charge carrier balance and performance of CdSe/ZnS quantum-dot light-emitting diodes (QD-LEDs) with a vacuum-deposited electron-transport layer (ETL) and carrier-restricting layer (CRL) were successfully improved. Optimizing the fabrication process of the reactively sputtered zinc-tin-oxide (ZTO) ETL and adopting a thermally evaporated tungsten-oxide (WOx) CRL improved the electron-hole balance, thus leading to QD-LEDs with improved performance. Impedance spectroscopy analysis was successfully exploited in investigating charge carrier injection into each layer of the QD-LED and electron-hole recombination behaviors. The QD-LED with optimized ZTO ETL and without WOx CRL exhibited 2600 cd m(-2) luminance and 3.2 cd A(-1) current efficiency, and the QD-LED with both optimized ZTO ETL and a WOx CRL exhibited 3900 cd m(-2) luminance and 5.1 cd A(-1) current efficiency. These results imply a practical method for improving the electron-hole balance and performance of QD-LEDs, and provide a reliable technique for analyzing the carrier behavior of QD-LEDs. (C) 2019 The Japan Society of Applied Physics
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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