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Fabrication of two-dimensional MoS2 thin-film transistors using a reactive thermal evaporation method combined with an annealing step

Authors
Park, Tae-KwangLee, Ho-Nyeon
Issue Date
2018
Publisher
Taylor & Francis
Keywords
Annealing; MoS2; thermal evaporation; thin-film transistor; two dimensional
Citation
Molecular Crystals and Liquid Crystals, v.662, no.1, pp 2 - 8
Pages
7
Journal Title
Molecular Crystals and Liquid Crystals
Volume
662
Number
1
Start Page
2
End Page
8
URI
https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/6867
DOI
10.1080/15421406.2018.1466234
ISSN
1542-1406
1543-5318
Abstract
Two-dimensional (2-D) MoS2 films were fabricated by reactive thermal evaporation combined with thermal annealing. The 2-D nature of the MoS2 films is demonstrated by observation of direct transition and a Van Hove singularity in the absorbance curve. The 1T phase MoS2 is confirmed by X-ray photoelectron spectroscopy. MoS2 thin-film transistors (TFTs) are fabricated using the MoS2 active layer transferred onto an oxidized Si wafer from a sapphire wafer. The MoS2 TFT demonstrates a threshold voltage of 37.6V, a field-effect mobility of 6.94 cm(2)V(-1)s(-1) a sub-threshold swing of 29.2 V/dec and a switching ratio of 10(3).
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