MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity
- Authors
- Yang, J[Yang, Jaehyun]; Kwak, H[Kwak, Hyena]; Lee, Y[Lee, Youngbin]; Kang, YS[Kang, Yu-Seon]; Cho, MH[Cho, Mann-Ho]; Cho, JH[Cho, Jeong Ho]; Kim, YH[Kim, Yong-Hoon]; Jeong, SJ[Jeong, Seong-Jun]; Park, S[Park, Seongjun]; Lee, HJ[Lee, Hoo-Jeong]; Kim, H[Kim, Hyoungsub]
- Issue Date
- 6-Apr-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- molybdenum disulfide; solution-based synthesis; InGaZnO; heterojunction; phototransistor
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.8, no.13, pp.8576 - 8582
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 8
- Number
- 13
- Start Page
- 8576
- End Page
- 8582
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/37021
- DOI
- 10.1021/acsami.5b11709
- ISSN
- 1944-8244
- Abstract
- We introduce an amorphous indium gallium zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of similar to 1.7 eV) and sputter-deposited a-IGZO (with a band gap of similar to 3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measure ments reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 mu W) with excellent time-dependent photoresponse dynamics.
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- Appears in
Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
- Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles
- SKKU Advanced Institute of Nano Technology > ETC > 1. Journal Articles
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