Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode
- Authors
- Vu, V[Vu, Van Tu]; Phan, TL[Phan, Thanh Luan]; Vu, TTH[Vu, Thi Thanh Huong]; Park, MH[Park, Mi Hyang]; Do, V[Do, Van Dam]; Bui, VQ[Bui, Viet Quoc]; Kim, K[Kim, Kunnyun]; Lee, YH[Lee, Young Hee]; Yu, WJ[Yu, Woo Jong]
- Issue Date
- Aug-2022
- Publisher
- AMER CHEMICAL SOC
- Keywords
- one-step synthesis; chemical vapor deposition; transition-metal dichalcogenide lateral heterostructure; selective doping control; photodiode
- Citation
- ACS NANO, v.16, no.8, pp.12073 - 12082
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS NANO
- Volume
- 16
- Number
- 8
- Start Page
- 12073
- End Page
- 12082
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/98542
- DOI
- 10.1021/acsnano.2c02242
- ISSN
- 1936-0851
- Abstract
- In this study, selective Nb doping (P-type) at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor containing W, Mo, and Nb atoms is proposed. The different chemical activity reactivity (MoO3 > WO3 > Nb2O5) enable the separation of the growth temperature of intrinsic MoS2 to 700 degrees C (first grown inner layer) and Nb-doped WS2 to 800 degrees C (second grown outer layer). By controlling the Nb/(W+Nb) molar ratio in the solution precursor, the hole carrier density in the p-type WS2 layer is selectively controlled from approximately 1.87 x 10(7)/cm(2) at 1.5 at.% Nb to approximately 1.16 x 10(13)/cm(2) at 8.1 at.% Nb, while the electron carrier density in n-type MoS2 shows negligible change with variation of the Nb molar ratio. As a result, the electrical behavior of the WS2-MoS2 heterostructure transforms from the N-N junction (0 at.% Nb) to the P-N junction (4.5 at.% Nb) and the P-N tunnel junction (8.1 at.% Nb). The band-to -band tunneling at the P-N tunnel junction (8.1 at.% Nb) is eliminated by applying negative gate bias, resulting in a maximum rectification ratio (10(5)) and a minimum channel resistance (10(8) omega). With this optimized photodiode (8.1 at.% Nb at V-g = -30 V), an I-photo/I-dark ratio of 6000 and a detectivity of 1.1 x 10(14)Jones are achieved, which are approximately 20 and 3 times higher, respectively, than the previously reported highest values for CVD-grown transition-metal dichalcogenide P-N junctions.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
- Graduate School > Energy Science > 1. Journal Articles
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