Mapping strain gradients in the FIB-structured InGaN/GaN multilayered films with 3D X-ray microbeam
- Authors
- Barabash, R. I.; Gao, Y. F.; Ice, G. E.; Barabash, O. M.; Chung, Jin-Seok; Liu, W.; Kroeger, R.; Lohmeyer, H.; Sebald, K.; Gutowski, J.; Boettcher, T.; Hommel, D.
- Issue Date
- 25-Nov-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Strain; Nitride semiconductors; X-ray microbeam; Dislocations; Lattice rotations
- Citation
- MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, v.528, no.1, pp.52 - 57
- Journal Title
- MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
- Volume
- 528
- Number
- 1
- Start Page
- 52
- End Page
- 57
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/14634
- DOI
- 10.1016/j.msea.2010.04.045
- ISSN
- 0921-5093
- Abstract
- This research presents a combined experimental-modeling study of lattice rotations and deviatoric strain gradients induced by focused-ion beam (FIB) milling in nitride heterostructures. 3D X-ray polychromatic microdiffraction (PXM) is used to map the local lattice orientation distribution in FIB-structured areas. Results are discussed in connection with microphotoluminescence (mu-PL), fluorescent analysis, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) data. It is demonstrated that FIB-milling causes both direct and indirect damage to the InGaN/GaN layers. In films subjected to direct ion beam impact, a narrow amorphidized top layer is formed. Near the milling area, FIB-induced stress relaxation and formation of complicated 3D strain fields are observed. The resulting lattice orientation changes are found to correlate with a decrease and/or loss of PL intensity, and agree well with finite element simulations of the three-dimensional strain fields near the relaxed trenches. Experimentally, it is found that the lattice surface normal has an in-plane rotation, which only appears in simulations when the GaN-substrate lattice mismatch annihilates the InGaN-substrate mismatch. This behavior further supports the notion that the film/substrate interface is incoherent. (C) 2010 Elsevier B.V. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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