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Photoluminescence induced by thermal annealing in SrTiO3 thin film
- Authors
- Rho, JaeHoon; Jang, SeungHun; Ko, Young Dong; Kang, SeungJin; Kim, Dong-Wook; Chung, J. -S.; Kim, Miyoung; Han, Moonsup; Choi, Eunjip
- Issue Date
- 14-Dec-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- annealing; defect states; dielectric thin films; energy gap; high-temperature effects; permittivity; photoluminescence; sputter deposition; strontium compounds
- Citation
- APPLIED PHYSICS LETTERS, v.95, no.24
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 95
- Number
- 24
- ISSN
- 0003-6951
- Abstract
- We have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 degrees C) annealing. When subsequent low-T (50 degrees C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at lambda=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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Related Researcher
- Chung, Jin Seok
- College of Natural Sciences (Department of Physics)