Characteristics of indium-tin-oxide Schottky contacts to ZnMgO/ZnO heterojunctions with band gap grading
DC Field | Value | Language |
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dc.contributor.author | Yoon, Jong-Gul | - |
dc.contributor.author | Cho, Sung Woo | - |
dc.contributor.author | Lee, E. | - |
dc.contributor.author | Chung, J. -S. | - |
dc.date.available | 2018-05-10T15:15:33Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2009-11-30 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/15736 | - |
dc.description.abstract | We report on electrical characteristics of indium-tin-oxide (ITO) Schottky contacts to transparent n-n isotype heterojunctions composed of a compositionally graded Zn1-xMgxO (g-ZnMgO) and ZnO films fabricated on ITO-coated glass substrates. The transparent ITO Schottky contacts to g-ZnMgO/ZnO heterostructures resulted in excellent diode characteristics with the rectification ratios as high as 10(4) at a bias voltage of +/- 3.0 V. The effective Schottky barrier heights were about 0.6 eV and could be tuned by modifying the electrical properties of g-ZnMgO layer. The formation of high barrier Schottky contacts was discussed in conjunction with a band gap grading and a highly resistive surface layer of g-ZnMgO. | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.subject | MGXZN1-XO | - |
dc.title | Characteristics of indium-tin-oxide Schottky contacts to ZnMgO/ZnO heterojunctions with band gap grading | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3268787 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.95, no.22 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000272627600026 | - |
dc.identifier.scopusid | 2-s2.0-71949101819 | - |
dc.citation.number | 22 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 95 | - |
dc.contributor.affiliatedAuthor | Chung, J. -S. | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | electrical resistivity | - |
dc.subject.keywordAuthor | energy gap | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | magnesium compounds | - |
dc.subject.keywordAuthor | rectification | - |
dc.subject.keywordAuthor | Schottky barriers | - |
dc.subject.keywordAuthor | semiconductor heterojunctions | - |
dc.subject.keywordAuthor | semiconductor materials | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.subject.keywordPlus | MGXZN1-XO | - |
dc.description.journalRegisteredClass | scopus | - |
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