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Characteristics of indium-tin-oxide Schottky contacts to ZnMgO/ZnO heterojunctions with band gap grading
- Authors
- Yoon, Jong-Gul; Cho, Sung Woo; Lee, E.; Chung, J. -S.
- Issue Date
- 30-Nov-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- electrical resistivity; energy gap; II-VI semiconductors; indium compounds; magnesium compounds; rectification; Schottky barriers; semiconductor heterojunctions; semiconductor materials; semiconductor thin films; wide band gap semiconductors; zinc compounds
- Citation
- APPLIED PHYSICS LETTERS, v.95, no.22
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 95
- Number
- 22
- ISSN
- 0003-6951
- Abstract
- We report on electrical characteristics of indium-tin-oxide (ITO) Schottky contacts to transparent n-n isotype heterojunctions composed of a compositionally graded Zn1-xMgxO (g-ZnMgO) and ZnO films fabricated on ITO-coated glass substrates. The transparent ITO Schottky contacts to g-ZnMgO/ZnO heterostructures resulted in excellent diode characteristics with the rectification ratios as high as 10(4) at a bias voltage of +/- 3.0 V. The effective Schottky barrier heights were about 0.6 eV and could be tuned by modifying the electrical properties of g-ZnMgO layer. The formation of high barrier Schottky contacts was discussed in conjunction with a band gap grading and a highly resistive surface layer of g-ZnMgO.
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Related Researcher
- Chung, Jin Seok
- College of Natural Sciences (Department of Physics)