Detailed Information
Cited 0 time in 
Cited 66 time in 
Cited 66 time in
Metadata Downloads
Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films
- Authors
- Kim, Y. S.; Kim, J.; Moon, S. J.; Choi, W. S.; Chang, Y. J.; Yoon, J. -G.; Yu, J.; Chung, J. -S.; Noh, T. W.
- Issue Date
- 18-May-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- ab initio calculations; defect states; energy gap; ferroelectric materials; ferroelectric thin films; light transmission; strontium compounds; vacancies (crystal); X-ray absorption spectra
- Citation
- APPLIED PHYSICS LETTERS, v.94, no.20
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 94
- Number
- 20
- ISSN
- 0003-6951
- Abstract
- Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Y. S. Kim , Appl. Phys. Lett. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO(3) without affecting its insulating property. These results are consistent with electronic structural changes determined from optical transmission and x-ray absorption measurements. Our work suggests importance of oxygen vacancies and their complexes in understanding of electronic properties of perovskite oxide thin films, including STO.
- Files in This Item
- Go to Link
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Chung, Jin Seok
- College of Natural Sciences (Department of Physics)