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Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memoryopen access

Authors
Nguyen, Thien AnLee, Jaejin
Issue Date
Oct-2023
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Asymmetric write error rate; cascaded channel; error correction codes (ECCs); Hamming code; non-volatile RAM; sparse codes; spin-torque transfer magnetic random access memory (STT-MRAM)
Citation
IEEE ACCESS, v.11, pp.114071 - 114079
Journal Title
IEEE ACCESS
Volume
11
Start Page
114071
End Page
114079
URI
https://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/44645
DOI
10.1109/ACCESS.2023.3324255
ISSN
2169-3536
Abstract
Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM). However, STT-MRAM faces challenges due to process variations and thermal fluctuations, resulting in independent errors during the writing and reading. The STT-MRAM systems employ encoder and decoder mechanisms to address these errors. In addition, to handle asymmetric write error probabilities, a sparse code approach was adopted. Here, we propose an innovative algorithm based on the Hamming code to encode a sparse code with a minimum Hamming distance (MHD) of three. Our encoder introduces a general method to directly generate sparse code with an MHD of three from the user data. Before multiplying the data vectors by the generator matrix, we preprocessed them using an inverse method to ensure that the output of the generator matrix remained sparse. Furthermore, by leveraging the sum-product and syndrome decoding algorithms, we designed decoders that complemented the encoder. The simulation results showed that our proposed model could improve the speed and performance of STT-MRAM devices while overcoming the complexity issue of previous studies.
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Lee, Jae jin
College of Information Technology (Department of Electronic Engineering)
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