Numerical self-consistent field calculation of a ferromagnetic ZnMnO quantum well
- Authors
- Kim, Nammee; Kim, H.; Kim, J. W.; Lee, S. J.; Kang, T. W.
- Issue Date
- Oct-2006
- Publisher
- AMERICAN PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.74, no.15
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 74
- Number
- 15
- URI
- https://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/48913
- DOI
- 10.1103/PhysRevB.74.155327
- ISSN
- 1098-0121
- Abstract
- The magnetic properties of a p-type ZnMnO diluted magnetic semiconductor quantum well are investigated by a numerical self-consistent field calculation taking into account the spin-exchange interaction between free carriers and magnetic impurities and the carrier exchange-correlation interaction based on the mean field theory of carrier-induced ferromagnetism. The dependence of the carrier spin polarization on magnetic impurity density and the spin-exchange interaction energy is presented in comparison with well-known III-V-based diluted magnetic semiconductors. The results show that room temperature operation of ZnMnO-based spin devices is probably easier than that of any other materials investigated with the same numerical method.
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