A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contactopen access
- Authors
- Oh, Seung Yoon; Jeong, Yeong Je; Kang, Inho; Park, Ji-Hyeon; Yeom, Min Jae; Jeon, Dae-Woo; Yoo, Geonwook
- Issue Date
- Jan-2024
- Publisher
- MDPI
- Keywords
- alpha-Ga2O3; MOSFET; hybrid Schottky drain; Ohmic drain; breakdown voltage
- Citation
- MICROMACHINES, v.15, no.1
- Journal Title
- MICROMACHINES
- Volume
- 15
- Number
- 1
- URI
- https://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/49189
- DOI
- 10.3390/mi15010133
- ISSN
- 2072-666X
2072-666X
- Abstract
- Among various polymorphic phases of gallium oxide (Ga2O3), alpha-phase Ga2O3 has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices. In this work, we demonstrate alpha-Ga2O3 MOSFETs with hybrid Schottky drain (HSD) contact, comprising both Ohmic and Schottky electrode regions. In comparison with conventional Ohmic drain (OD) contact, a lower on-resistance (R-on) of 2.1 k Omega mm is achieved for variable channel lengths. Physics-based TCAD simulation is performed to validate the turn-on characteristics of the Schottky electrode region and the improved R-on. Electric-field analysis in the off-state is conducted for both the OD and HSD devices. Furthermore, a record breakdown voltage (BV) of 2.8 kV is achieved, which is superior to the 1.7 kV of the compared OD device. Our results show that the proposed HSD contact with a further optimized design can be a promising drain electrode scheme for alpha-Ga2O3 power MOSFETs.
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