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Showing results 1 to 20 of 32

Blocking of acidosis-mediated apoptosis by a reduction of lactate dehydrogenase activity through antisense mRNA expression

Jeong, DW; Kim, TS; Lee, JW; Kim, KT; Kim, HJ; Kim, IH; Kim, IY

ArticleIssue Date2001CitationBIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS, v.289, no.5, pp 1141 - 1149PublisherACADEMIC PRESS INC ELSEVIER SCIENCE
Characterization of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by metal organic decomposition method

Kim, KT; Kim, CI

ArticleIssue Date2005CitationTHIN SOLID FILMS, v.478, no.1-2, pp 6 - 12PublisherELSEVIER SCIENCE SA
Correlation between dielectric properties and strain in Pb0.5Sr0.5TiO3 thin films prepared by using the sol-gel method

Kim, KT; Kim, CI; Lee, SG; Kim, HM

ArticleIssue Date2005CitationSURFACE & COATINGS TECHNOLOGY, v.190, no.2-3, pp 190 - 194PublisherELSEVIER SCIENCE SA
Dielectric properties of (Pb,Sr)TiO3 thin films prepared by using the sol-gel method

Kim, KT; Kim, CI; Lee, SG

ArticleIssue Date2002CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.3, pp 377 - 380PublisherKOREAN PHYSICAL SOC
Dielectric properties of highly (100) oriented (Pb-0.5, Sr-0.5)TiO3 thin films grown on LaNiO3 electrodes

Kim, KT; Kim, CI

ArticleIssue Date2004CitationTHIN SOLID FILMS, v.447-448, pp 651 - 655PublisherELSEVIER SCIENCE SA
Dry etching of (Ba,Sr)TiO3 thin films using an inductively coupled plasma

Kim, GH; Kim, KT; Kim, CI

ArticleIssue Date2005CitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.23, no.4, pp 894 - 897PublisherA V S AMER INST PHYSICS
Dry etching of (Pb,Sr)TiO3 thin films using inductively coupled plasma

Kim, GH; Kim, JS; Kim, KT; Kim, DP; Kim, CI

ArticleIssue Date2005CitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.23, no.4, pp 890 - 893PublisherA V S AMER INST PHYSICS
Dry etching of LaNiO3 thin films using inductively coupled plasma

Kim, GH; Kim, DP; Kim, KT; Kim, CI; Lee, CI; Kim, TH

ArticleIssue Date2006CitationTHIN SOLID FILMS, v.506, pp 217 - 221PublisherELSEVIER SCIENCE SA
Effect of Bi4Ti3O12 seeding layer on the structural and ferroelectric properties of Bi3.25La0.75TiO12 thin films fabricated by a metalorganic decomposition method

Kim, KT; Kim, CI

ArticleIssue Date2004CitationTHIN SOLID FILMS, v.447-448, pp 413 - 417PublisherELSEVIER SCIENCE SA
Effect of bismuth excess on the crystallization of Bi3.25La0.75Ti3O12 thin films on Pt/Ti/SiO2/Si substrates

Kim, KT; Kim, CI

ArticleIssue Date2004CitationMICROELECTRONIC ENGINEERING, v.71, no.3-4, pp 266 - 271PublisherELSEVIER SCIENCE BV
Effect of CF4 addition to Cl-2/Ar on the etching of ferroelectric YMnO3

Park, JH; Kim, KT; Kim, CI; Chang, EG

ArticleIssue Date2002CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp 993 - 997PublisherKOREAN PHYSICAL SOC
Effect of thickness on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films on Pt/Ti/SiO2/Si substrates

Kim, KT; Song, SH; Kim, CI

ArticleIssue Date2004CitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.22, no.4, pp 1315 - 1318PublisherA V S AMER INST PHYSICS
Electrical and dielectric properties of Ce-doped Ba0.6Sr0.4TiO3 thin films

Kim, KT; Kim, CI

ArticleIssue Date2006CitationSURFACE & COATINGS TECHNOLOGY, v.200, no.16-17, pp 4708 - 4712PublisherELSEVIER SCIENCE SA
Electrical conduction behavior of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by a metalorganic decomposition method

Kim, KT; Kim, CI

ArticleIssue Date2004CitationSURFACE & COATINGS TECHNOLOGY, v.177-178, pp 774 - 778PublisherELSEVIER SCIENCE SA
Electrical properties of Bi4-xEuxTi3O12 (BET) thin films after etching in inductively coupled CF4/Ar plasma

Lim, KT; Kim, KT; Kim, DP; Kim, CI

ArticleIssue Date2004CitationTHIN SOLID FILMS, v.447-448, pp 337 - 342PublisherELSEVIER SCIENCE SA
Etch characteristics of BCB film using inductively coupled plasma

Kang, PS; Kim, DP; Kim, KT; Kim, CI; Kim, S.-G.

ArticleIssue Date2003CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, no.SUPPL.2, pp S819 - S823PublisherKOREAN PHYSICAL SOC
Etching characteristics and mechanism of Pb(Zr,Ti)O-3 thin films in CF4/Ar inductively coupled plasma

Efremov, AM; Kim, DP; Kim, KT; Kim, CI

ArticleIssue Date2004CitationVACUUM, v.75, no.4, pp 321 - 329PublisherPERGAMON-ELSEVIER SCIENCE LTD
Etching mechanism of Bi4-xLaxTi3O12 films in Ar/Cl-2 inductively coupled plasma

Kim, DP; Kim, KT; Kim, CI; Efremov, AM

ArticleIssue Date2004CitationTHIN SOLID FILMS, v.447-448, pp 343 - 348PublisherELSEVIER SCIENCE SA
Etching mechanism of MgO thin films in inductively coupled Cl-2/Ar plasma

Efremov, AM; Koo, SM; Kim, DP; Kim, KT; Kim, CI

ArticleIssue Date2004CitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.22, no.5, pp 2101 - 2106PublisherA V S AMER INST PHYSICS
Etching mechanism of Pb(Zr,Ti)O-3 thin films in Cl-2/Ar plasma

Efremov, AM; Kim, DP; Kim, KT; Kim, CI

ArticleIssue Date2004CitationPLASMA CHEMISTRY AND PLASMA PROCESSING, v.24, no.1, pp 13 - 28PublisherKLUWER ACADEMIC/PLENUM PUBL
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