High Performance p-type SnO thin-film Transistor with SiOx Gate Insulator Deposited by Low-Temperature PECVD Method
- Authors
- Myeonghun, U.; Han, Young-Joon; Song, Sang-Hun; Cho, In-Tak; Lee, Jong-Ho; Kwon, Hyuck-In
- Issue Date
- Oct-2014
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- P-type SnO TFTs; gate insulator; PECVD SiOx; localized-trap-states model
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.14, no.5, pp 666 - 672
- Pages
- 7
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 14
- Number
- 5
- Start Page
- 666
- End Page
- 672
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/11796
- DOI
- 10.5573/JSTS.2014.14.5.666
- ISSN
- 1598-1657
2233-4866
- Abstract
- We have investigated the gate insulator effects on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). Various SnO TFTs are fabricated with different gate insulators of a thermal SiO2, a plasma-enhanced chemical vapor deposition (PECVD) SiNx, a 150 degrees C-deposited PEVCD SiOx, and a 300 degrees C-deposited PECVD SiOx. Among the devices, the one with the 150 degrees C-deposited PEVCD SiOx exhibits the best electrical performance including a high field-effect mobility (=4.86 cm(2)/Vs), a small subthreshold swing (=0.7 V/decade), and a turn-on voltage around 0 (V). Based on the X-ray diffraction data and the localized-trap-states model, the reduced carrier concentration and the increased carrier mobility due to the small grain size of the SnO thin-film are considered as possible mechanisms, resulting in its high electrical performance.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/11796)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.