In-Situ Metallic Oxide Capping for High Mobility Solution-Processed Metal-Oxide TFTs
- Authors
- Kim, Kyung Tae; Kim, Jaekyun; Kim, Yong-Hoon; Park, Sung Kyu
- Issue Date
- Aug-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Metallic capping layer; transparent capping; indium-gallium-zinc oxide; solution process; high mobility
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.35, no.8, pp 850 - 852
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 35
- Number
- 8
- Start Page
- 850
- End Page
- 852
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/12005
- DOI
- 10.1109/LED.2014.2329955
- ISSN
- 0741-3106
1558-0563
- Abstract
- Transparent and highly conductive indium-zinc oxide (IZO) was utilized as a metallic capping layer in solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to enhance their electrical performance. By applying an in-situ metallic oxide (IZO) as a capping layer, which can be monolithically patterned with source/drain electrodes, the IGZO TFTs have shown enhanced mobility as high as similar to 60 cm(2)/V-s, subthreshold slope of <0.1 V/decade, and threshold voltage of similar to 1-2 V. We found that metallic capping layers having work function lower than that of the channel material can induce a significant reduction in series resistance and enhance the apparent field-effect mobility of the device.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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