Electrical Transport Characterization of PEDOT:PSS/n-Si Schottky Diodes and Their Applications in Solar Cells
- Authors
- Khurelbaatar, Zagarzusem; Hyung, Jung-Hwan; Kim, Gil-Sung; Park, No-Won; Shim, Kyu-Hwan; Lee, Sang-Kwon
- Issue Date
- Jun-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- PEDOT:PSS; Schottky Diodes; Current-Voltage Measurement; Capacitance-Voltage Measurement; Conversion Efficiency
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.6, pp 4394 - 4399
- Pages
- 6
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 6
- Start Page
- 4394
- End Page
- 4399
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/12151
- DOI
- 10.1166/jnn.2014.7937
- ISSN
- 1533-4880
1533-4899
- Abstract
- We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of similar to 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I-SC), open circuit voltage (V-OC), and conversion efficiency (eta) were similar to 19.7 mA/cm(2), similar to 578.5 mV, and similar to 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT: PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.
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