Current-Voltage Model of Bulk Fin Field-Effect Transistors with a Half-Circle Corner
- Authors
- Choi, Byung-Kil; Jeong, Min-Kyu; Kwon, Hyuck-In; Park, Byung-Gook; Lee, Jong-Ho
- Issue Date
- Jun-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.6
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 6
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14608
- DOI
- 10.7567/JJAP.52.064202
- ISSN
- 0021-4922
1347-4065
- Abstract
- The drain current of fully depleted (FD) nanoscale bulk FinFETs with the top-channel of a half-circle shape was modeled, for the first time, systematically in all operational regions and compared with the data obtained from three-dimensional (3D) device simulation. In the current model of these devices, it is very important to have accurate threshold voltages for side-channels and top-channel, and take the field penetration effect induced by the top-gate near the top of a fin body into account the threshold voltage (Vth) models for top-channels and side-channels, respectively. So, we obtained successfully the Vth models [Vth(0,t) (Vth model of top-channel at a low drain bias) and Vth(0,s) (Vth model of side-channels at a low drain bias)] considering the field penetration effect for both channels (top-and side-channels) to model the current behaviors in the doped bulk FinFETs with the top-channel of a half-circle shape. Our compact current model with Vth(0,t) and Vth(0,s) predicted accurately the current behaviors of the devices and shown a good agreement with 3D simulation. (C) 2013 The Japan Society of Applied Physics
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14608)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.