Detailed Information
Cited 11 time in 
Cited 21 time in 
Cited 21 time in
Metadata Downloads
The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling
- Authors
- Wu, Meile; Jin, Xiaoshi; Kwon, Hyuck-In; Chuai, Rongyan; Liu, Xi; Lee, Jong-Ho
- Issue Date
- Jun-2013
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Band-to-band tunneling (BTBT); double-gate (DG); junctionless field-effect transistor (JL FET); device simulation; optimal design
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.3, pp 245 - 251
- Pages
- 7
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 13
- Number
- 3
- Start Page
- 245
- End Page
- 251
- ISSN
- 1598-1657
- Abstract
- The effect of band-to-band tunneling (BTBT) leads to an obvious increase of the leakage current of junctionless (JL) transistors in the OFF state. In this paper, we propose an effective method to decline the influence of BTBT with the example of n-type double gate (DG) JL metal-oxide-semiconductor field-effect transistors (MOSFETs). The leakage current is restrained by changing the geometrical shape and the physical dimension of the gate of the device. The optimal design of the JL MOSFET is indicated for reducing the effect of BTBT through simulation and analysis.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.