Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors
- Authors
- Jeong, Chan-Yong; Sohn, Joonsung; Song, Sang-Hun; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Hyuck-In
- Issue Date
- Feb-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.8
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 8
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14842
- DOI
- 10.1063/1.4794061
- ISSN
- 0003-6951
1077-3118
- Abstract
- We investigate the charge transport mechanism and subgap density of states (DOS) in p-type Cu2O thin-film transistors (TFTs) using the bias and temperature dependence of the drain currents. Among several charge transport mechanisms, the experimental data are well matched with a multiple trapping and release model, which suggests that the charge transport in the Cu2O TFT is mainly limited by trap states at grain boundaries or dielectric/semiconductor interface. The subgap DOS is extracted based on the Meyer-Neldel rule. Large density of subgap states is extracted, which is considered to be the reason of low mobility in fabricated Cu2O TFTs. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794061]
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