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Dry etching characteristics of indium zinc oxide thin films in adaptive coupled plasmaDry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma
- Authors
- Woo, J.-C.; Choi, C.-A.; Kim, C.-I.
- Issue Date
- Jun-2013
- Publisher
- 한국전기전자재료학회
- Keywords
- Cl2; Etching; Indium zinc oxide; IZO; X-ray photoelectron spectroscopy
- Citation
- Transactions on Electrical and Electronic Materials, v.14, no.4, pp 216 - 220
- Pages
- 5
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 14
- Number
- 4
- Start Page
- 216
- End Page
- 220
- ISSN
- 1229-7607
2092-7592
- Abstract
- The etching characteristics of indium zinc oxide (IZO) in Cl2/Ar plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing Cl2 fraction in the Cl2/Ar plasma, and with increasing source power, bias power, and process pressure. In the Cl2/Ar (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to SiO2 were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching. © 2013 KIEEME. All rights reserved.
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