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Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices
- Authors
- Lee, Jung-Kyu; Cho, In-Tak; Kwon, Hyuck-In; Hwang, Cheol Seong; Park, Chan Hyeong; Lee, Jong-Ho
- Issue Date
- Jul-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Conduction mechanism; low-frequency noise (LFN); resistive switching; resistive random access memory (RRAM)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.33, no.7, pp 1063 - 1065
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 33
- Number
- 7
- Start Page
- 1063
- End Page
- 1065
- ISSN
- 0741-3106
1558-0563
- Abstract
- Low-frequency noise (LFN) characteristics have been studied in polycrystalline-TiOx-based resistive random access memories (RRAMs). LFNs are proportional to 1/f in high-resistance state (HRS), but those in low-resistance state (LRS) are proportional to 1/f only in less than similar to 100 Hz. The normalized noise power in HRS is around three orders of magnitude higher than that in LRS. Bias dependence of 1/f noise shows that the current conduction mechanisms from noise measurements are consistent with those from the current-voltage relationships in TiOx-based unipolar RRAM devices.
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