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AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter
- Authors
- Kim, Dae-Hwan; Kong, Dongsik; Kim, Sungchul; Jeon, Young Woo; Kim, Yongsik; Kim, Dong Myong; Kwon, Hyuck-In
- Issue Date
- Sep-2011
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.9
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 50
- Number
- 9
- ISSN
- 0021-4922
1347-4065
- Abstract
- The degradation of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) inverter operation is investigated under AC pulse stresses. From the extraction of subgap density of states (DOSs), the dominant mechanism of the pulse stress-induced degradation of driver TFT is considered as the increase of acceptor-like deep states, while that of the load TFT is attributed to the increased number of electrons trapped into the interface and/or a-IGZO thin films. We also observe that the rising and falling time of the induced pulse affects each TFT of the inverter in a different manner, and discuss the related mechanism of this phenomenon. (C) 2011 The Japan Society of Applied Physics
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