The dry etching properties on TiN thin film using an N<inf>2</inf>/BCl<inf>3</inf>/Ar inductively coupled plasma
- Authors
- Woo, J.-C.; Joo, Y.-H.; Park, J.-S.; Kim, C.-I.
- Issue Date
- 2011
- Publisher
- Korean Institute of Electrical and Electronic Material Engineers
- Keywords
- Etch; Inductively coupled plasma; Tin; X-ray photoelectron spectroscopy
- Citation
- Transactions on Electrical and Electronic Materials, v.12, no.4, pp 144 - 147
- Pages
- 4
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 12
- Number
- 4
- Start Page
- 144
- End Page
- 147
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/21868
- DOI
- 10.4313/TEEM.2011.12.4.144
- ISSN
- 1229-7607
2092-7592
- Abstract
- In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a N2/BCl3/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = 40°C, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the SiO2 thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism. © 2011 KIEEME. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/21868)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.